Transistors Having On-Chip Integrared Photon Source or Photonic-Ohmic Drain to Facilitate De-Trapping Electrons Trapped in Deep Traps of Transistors
The invention claims a technique for pumping deep traps in GaN electronic devices using photons from an on-chip photon source. In various embodiments the method configured to generate photon on chip integrated photon source during the operation period of the high electron mobility transistor to provide a method for optical suction of deep trap in GaN high electron mobility transistor. In one aspect the on-chip photon source is SoH-LED. In each additional embodiment an integrated scheme is provided for integrating a photon source in a drain electrode of a high electron mobility transistor thereby converting a conventional high electron mobility transistor having an ohmic drain into a transistor having a mixed photon ohmic drain (POD); abbreviated as POD transistor or PODFET.
Countries or Regions:
CN
Invention Code:
IP.PA.00820
Contact Us:
okt@ust.hk
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Category:
TAP - Microelectronics
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