Gate Protected Semiconductor Devices
Providing gate protection to a group III-semiconductor device by delivering gate overdrive immunity is described herein. The gate protection can be achieved by embedding a gate-voltage-controlling second transistor to the gate electrode of a first transistor. In other words a first gate electrode of the first semiconductor device is in series with a second source electrode of the second semiconductor device and a second gate electrode of the second semiconductor device is connected to the second source electrode and the first gate electrode.
Countries or Regions:
US
Invention Code:
IP.PA.00628
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okt@ust.hk
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Category:
TAP - Microelectronics
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