Method and Apparatus for Generating Giant Spin-Dependent Chemical Potential Difference in Non-Magnetic Materials
A system structure and method of making the structure are disclosed for generating a large chemical potential difference between spin-up and spin-down electrons in non-magnetic materials. The device includes an inverse spin valve of a sandwiched layer structure with alternating non-magnetic and magnetic layers. In an embodiment of the invention the structure is a tri-layer device with a magnetic layer sandwiched by two non-magnetic metals. Once the inverse spin valve structure is provided an external electric field is applied to the inverse spin valve to generate a large chemical potential difference between the spin-up and spin-down electrons. In an embodiment of the invention this feature is exploited to create a tunable light emitting diode or laser. In an embodiment of the invention a dynamical magnetism is induced and controlled in the valve by an electric field. The dynamical magnetization may be used as spin source or in electronic storage devices.
Countries or Regions:
US
Invention Code:
IP.PA.00364
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okt@ust.hk
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Category:
TAP - Advanced Materials
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