Oxide Microchannel with Controllable Diameter and Method of Manufacturing the Same
Described herein is a microchannel that is formed beneath and parallel to a surface of a silicon substrate. Silicon migration technology is utilized to form a microchannel that is buried beneath the surface of the silicon substrate. Etching opens at least one end of the microchannel. Oxidization is utilized through the open end of the microchannel to facilitate a controlled diameter of the microchannel.
Countries or Regions:
USA
Invention Code:
TTC.PA.591
Contact Us:
okt@ust.hk
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Key Features:
Specification:
Category:
TAP - Microelectronics
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