Normally-Off III-Nitride Metal-2DEG Tunnel Junction Field-Effect Transistors
claims a manufacturing heterojunction AlGaN/GaN metal two-dimensional (2DEG) structure device and method for tunneling field effect transistors (TJ-FET). In one aspect metal-2DEG Schottky tunnel junctions can be employed in group III-Nitride field-effect devices that enable normally-off operation large breakdown voltage low leakage current and high on/off current ratio. Further the disclosed of AlGaN/GaN metal -2DEG TJ-FET may be manufactured in a horizontal and/or vertical devices. a further non-limiting embodiment provides advantages and flexibility of the disclosed structure.
Countries or Regions:
CN, TW, US
Invention Code:
IP.PA.00470
Contact Us:
okt@ust.hk
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Category:
TAP - Microelectronics
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