Method of Creating Back Barrier, and Enhancing the Off-State Breakdown and Blocking Capability in AlGaN/GaN HEMT by Fluorine Ion Implantation
本發明提供了在AlGaN/GaN高電子遷移率電晶體(HEMT)中產生增強背勢壘以提高器件擊穿和阻擋特性的結構、器件和方法。在一個方面，在製備HEMT時可以利用選擇性的氟離子注入來產生增強背勢壘的結構。利用在2DEG溝道下面的非故意摻雜GaN緩衝層中形成較高的能量勢壘，可以有利地提高關態擊穿電壓和增強阻斷性能，而同時又能實現方便的和成本有效的外延生長後的製備工序。同時所提供進一步的非限制性實施例描繪了本發明提出結構的優點和適應性。
Countries or Regions:
Taiwan, China
Invention Code:
TTC.PA.395
Contact Us:
okt@ust.hk
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Category:
TAP - Microelectronics
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