Semiconductor Transistors and Rectifiers with Hybrid Electrodes and Methods of Fabricating the Same
Systems, methods, and apparatus described herein are associated with devices including hybrid electrodes. A heterostructure semiconductor transistor can include a III-N-type semiconductor heterostructure including a barrier layer overlying an active layer and a hybrid electrode region including a hybrid drain electrode region. Further, a heterostructure semiconductor rectifier can include a III-N-type semiconductor heterostructure and a hybrid electrode region including a hybrid cathode electrode region. Furthermore, the hybrid electrode region of the transistor and rectifier can include permanently trapped charge located under a Schottky contact of the hybrid electrode region.
Countries or Regions:
USA, Taiwan, China
Invention Code:
TTC.PA.435
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okt@ust.hk
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Category:
TAP - Microelectronics
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