Metal-Oxide Based Thin-Film Transistors with Fluorinated Active Layer and Method of Fabrication
A thin-film transistor with a fluorinated channel and fluorinated source and drain regions and methods of fabrication are provided. The thin-film transistor includes: a substrate; a semiconductor active layer of fluorine-doped metal-oxide formed on the substrate; fluorine-doped source and drain regions disposed adjacent to the semiconductor active layer; a gate electrode disposed over the semiconductor active layer, configured to induce a continuous conduction channel between the source and drain regions; and a gate dielectric material separating the gate electrode and the channel.
Countries or Regions:
USA
Invention Code:
TTC.PA.557
Contact Us:
okt@ust.hk
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Specification:
Category:
TAP - Microelectronics
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